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| to - 220 -3l 1. base 2. collector 3. emitter to-220 -3l plastic-encapsulate transistors 2SD2012 transistor (npn) features z high dc current gain z low saturation voltage z high power dissipation maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo * i c =50ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 7 v collector cut-off current i cbo v cb =60v,i e =0 100 a emitter cut-off current i ebo v eb =7v,i c =0 100 a h fe(1) v ce =5v, i c =0.5a 100 320 h fe(2) v ce =5v, i c =2a 20 dc current gain h fe(3) v ce =5v, i c =3a 60 collector-emitter saturation voltage v ce(sat) i c =2a,i b =0.2a 1 v base-emitter voltage v be v ce =5v, i c =0.5a 1 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 35 pf transition frequency f t v ce =5v,i c =0.5a 3 mhz *pulse test symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current 3 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 63 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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